Description
ABB 5SHY35L4512 | 4.5 kV IGCT | High-Power Switching Device
Key Technical Specifications
| Parameter | Specification |
|---|---|
| Manufacturer | ABB |
| Part Number | 5SHY35L4512 |
| Device Type | Asymmetric IGCT |
| Technology | Integrated Gate-Commutated Thyristor |
| Repetitive Peak Off-State Voltage (VDRM) | 4,500 V |
| Maximum Controllable Turn-Off Current (ITGQM) | 4,000 A |
| Peak Non-Repetitive Surge Current | 35 kA, 10 ms |
| Maximum Average On-State Current | 2,100 A |
| Maximum RMS On-State Current | 3,300 A |
| Typical On-State Voltage | 1.8 V |
| Maximum On-State Voltage | 2.0 V at 4,000 A, 125°C |
| Critical Turn-On di/dt | 1,000 A/µs under specified test conditions |
| Turn-On Delay | 3.5 µs |
| Turn-Off Delay | 11 µs |
| Turn-Off Energy | 26 J typical / 37 J maximum under specified test conditions |
| Junction Temperature | -40 to +125°C |
| Storage Temperature | -40 to +60°C |
| Cooling Arrangement | Double-side cooled GCT section |
| Typical Gate Unit Generation | Generation A |
ABB’s datasheet gives VDRM = 4,500 V, ITGQM = 4,000 A, ITSM = 35 kA for 10 ms, and a typical on-state voltage of about 1.8 V at 4,000 A and 125°C. The datasheet also specifies a 2,100 A maximum average on-state current and 3,300 A maximum RMS on-state current under the stated cooling conditions.
Product Introduction
The ABB 5SHY35L4512 is an asymmetric Integrated Gate-Commutated Thyristor (IGCT) designed for high-power switching applications. It belongs to ABB’s 4.5 kV asymmetric IGCT family and is specifically optimized for low on-state losses and relatively low-frequency operation, rather than high-frequency switching.
The device combines the high-current capability of a thyristor-based power semiconductor with integrated gate-controlled turn-off. ABB documentation identifies the 5SHY35L4512 as the low-on-state-voltage member of the 4.5 kV family, making it particularly relevant to high-power converters, static breakers, and medium-voltage power-electronics equipment where conduction loss is a major design consideration.

5SHY35L4512
Application Scenarios & Field Pitfalls — Engineer’s Perspective
Engineering Pain Point
An IGCT replacement is not comparable to replacing a conventional PLC module. The semiconductor operates as part of a precisely engineered power circuit, and the gate unit, clamping pressure, cooling system, busbar arrangement, snubber network, and electrical parameters all affect whether the replacement is safe.
Typical Applications
- Medium-voltage power converters requiring high-current controllable switching
- Static and solid-state breakers, where the low conduction loss of the 5SHY35L4512 is useful
- High-power industrial drives and converter systems
- Energy-management and power-electronic equipment using ABB 4.5 kV IGCT technology
ABB’s own technical literature describes the 5SHY35L4512 as suited to low-frequency applications and specifically lists AC/DC breakers (solid-state breakers) among the typical applications.
Technical Pitfalls to Avoid
- Do not substitute 5SHY35L4510 or 5SHY35L4511 simply because the voltage and current class appear similar.
ABB identifies three different 4.5 kV asymmetric IGCT variants: the 4512 is optimized for low on-state voltage, the 4510 for lower total losses, and the 4511 for lower switching losses. Their electrical behavior is therefore intentionally different. - The gate unit is part of the engineering equation.
ABB’s IGCT application documentation associates the 5SHY35L4512 with a Generation A gate unit. The gate interface, gate current, status feedback, insulation, and mechanical installation must match the installed power stack. - Mechanical mounting is not optional.
The device is a pressure-mounted power semiconductor intended for controlled thermal and mechanical conditions. A replacement must match the original clamping arrangement, heatsink interfaces, cooling path, busbar geometry, and electrical creepage/clearance design.
Related Products
- ABB 5SHY35L4510 — 4.5 kV asymmetric IGCT optimized for lower total losses; not automatically interchangeable with the 4512.
- ABB 5SHY35L4511 — 4.5 kV asymmetric IGCT optimized for lower switching losses and higher switching frequency applications.
- ABB 5SHY35L4520 — later-generation 5SHY 35L IGCT family member using a Generation B gate-unit architecture; verify the complete power-stack design before considering substitution.
- ABB 5SHY42L6500 — higher-current asymmetric IGCT family member with a different electrical rating.
- ABB 5SHY42L6530 — another high-power asymmetric IGCT variant; voltage/current characteristics differ from 5SHY35L4512.
- ABB 5SHY55L4500 — larger asymmetric IGCT device in ABB’s high-power semiconductor range.
- ABB 5SHX19L6010 — reverse-conducting IGCT family device; its topology and electrical behavior differ from the asymmetric 5SHY35L4512.
- ABB 5SHX14H4510 — reverse-conducting IGCT designed for a different converter topology and application range.
Procurement Check
Before approving an ABB 5SHY35L4512, verify:
- Exact part number: 5SHY35L4512
- Device family: 4.5 kV asymmetric IGCT
- Original power-stack schematic
- Gate-unit generation and exact gate-driver assembly
- Heatsink and pressure-clamping arrangement
- Double-sided cooling arrangement
- Busbar geometry and terminal orientation
- Snubber/protection network
- DC-link voltage
- Required switching frequency
- Parallel/series device configuration
- Original semiconductor test records, if available
- Junction-temperature and cooling requirements
Recommended procurement description:
ABB 5SHY35L4512 Asymmetric Integrated Gate-Commutated Thyristor (IGCT), 4.5 kV, 4000 A Controllable Turn-Off Current, Low On-State Voltage, Low-Frequency High-Power Switching Device.
The key point is that 5SHY35L4512 is a power semiconductor, not an automation control board. Its most important distinguishing characteristic within the ABB 5SHY35L45 family is the low on-state voltage / low-conduction-loss design. For a field replacement, matching the complete semiconductor stack and gate-unit configuration is more important than matching the part number alone.
