ABB 5SHY35L4512 | 4.5 kV IGCT | Medium-Voltage Drive Replacement

  • Model: 5SHY35L4512
  • Manufacturer: ABB
  • Product Family: ABB IGCT / high-power semiconductor devices
  • Core Function: High-power controllable switching for medium-voltage power-electronic systems
  • Type: Asymmetric Integrated Gate-Commutated Thyristor (IGCT)
  • Voltage Rating: 4,500 V repetitive peak off-state voltage
  • Turn-Off Capability: 4,000 A maximum controllable turn-off current
  • Optimization: Low on-state voltage, low-frequency operation
  • Typical Application: Medium-voltage converters, breakers, drives, and high-power switching equipment
  • Temperature Range: -40 to +125°C junction operating range.
Category: SKU: ABB 5SHY35L4512

Description

ABB 5SHY35L4512 | 4.5 kV IGCT | High-Power Switching Device

 

Key Technical Specifications

Parameter Specification
Manufacturer ABB
Part Number 5SHY35L4512
Device Type Asymmetric IGCT
Technology Integrated Gate-Commutated Thyristor
Repetitive Peak Off-State Voltage (VDRM) 4,500 V
Maximum Controllable Turn-Off Current (ITGQM) 4,000 A
Peak Non-Repetitive Surge Current 35 kA, 10 ms
Maximum Average On-State Current 2,100 A
Maximum RMS On-State Current 3,300 A
Typical On-State Voltage 1.8 V
Maximum On-State Voltage 2.0 V at 4,000 A, 125°C
Critical Turn-On di/dt 1,000 A/µs under specified test conditions
Turn-On Delay 3.5 µs
Turn-Off Delay 11 µs
Turn-Off Energy 26 J typical / 37 J maximum under specified test conditions
Junction Temperature -40 to +125°C
Storage Temperature -40 to +60°C
Cooling Arrangement Double-side cooled GCT section
Typical Gate Unit Generation Generation A

ABB’s datasheet gives VDRM = 4,500 V, ITGQM = 4,000 A, ITSM = 35 kA for 10 ms, and a typical on-state voltage of about 1.8 V at 4,000 A and 125°C. The datasheet also specifies a 2,100 A maximum average on-state current and 3,300 A maximum RMS on-state current under the stated cooling conditions.

 

Product Introduction

The ABB 5SHY35L4512 is an asymmetric Integrated Gate-Commutated Thyristor (IGCT) designed for high-power switching applications. It belongs to ABB’s 4.5 kV asymmetric IGCT family and is specifically optimized for low on-state losses and relatively low-frequency operation, rather than high-frequency switching.

The device combines the high-current capability of a thyristor-based power semiconductor with integrated gate-controlled turn-off. ABB documentation identifies the 5SHY35L4512 as the low-on-state-voltage member of the 4.5 kV family, making it particularly relevant to high-power converters, static breakers, and medium-voltage power-electronics equipment where conduction loss is a major design consideration.

5SHY35L4512

Application Scenarios & Field Pitfalls — Engineer’s Perspective

Engineering Pain Point

An IGCT replacement is not comparable to replacing a conventional PLC module. The semiconductor operates as part of a precisely engineered power circuit, and the gate unit, clamping pressure, cooling system, busbar arrangement, snubber network, and electrical parameters all affect whether the replacement is safe.

Typical Applications

  • Medium-voltage power converters requiring high-current controllable switching
  • Static and solid-state breakers, where the low conduction loss of the 5SHY35L4512 is useful
  • High-power industrial drives and converter systems
  • Energy-management and power-electronic equipment using ABB 4.5 kV IGCT technology

ABB’s own technical literature describes the 5SHY35L4512 as suited to low-frequency applications and specifically lists AC/DC breakers (solid-state breakers) among the typical applications.

Technical Pitfalls to Avoid

  1. Do not substitute 5SHY35L4510 or 5SHY35L4511 simply because the voltage and current class appear similar.
    ABB identifies three different 4.5 kV asymmetric IGCT variants: the 4512 is optimized for low on-state voltage, the 4510 for lower total losses, and the 4511 for lower switching losses. Their electrical behavior is therefore intentionally different.
  2. The gate unit is part of the engineering equation.
    ABB’s IGCT application documentation associates the 5SHY35L4512 with a Generation A gate unit. The gate interface, gate current, status feedback, insulation, and mechanical installation must match the installed power stack.
  3. Mechanical mounting is not optional.
    The device is a pressure-mounted power semiconductor intended for controlled thermal and mechanical conditions. A replacement must match the original clamping arrangement, heatsink interfaces, cooling path, busbar geometry, and electrical creepage/clearance design.

 

Related Products

  • ABB 5SHY35L4510 — 4.5 kV asymmetric IGCT optimized for lower total losses; not automatically interchangeable with the 4512.
  • ABB 5SHY35L4511 — 4.5 kV asymmetric IGCT optimized for lower switching losses and higher switching frequency applications.
  • ABB 5SHY35L4520 — later-generation 5SHY 35L IGCT family member using a Generation B gate-unit architecture; verify the complete power-stack design before considering substitution.
  • ABB 5SHY42L6500 — higher-current asymmetric IGCT family member with a different electrical rating.
  • ABB 5SHY42L6530 — another high-power asymmetric IGCT variant; voltage/current characteristics differ from 5SHY35L4512.
  • ABB 5SHY55L4500 — larger asymmetric IGCT device in ABB’s high-power semiconductor range.
  • ABB 5SHX19L6010 — reverse-conducting IGCT family device; its topology and electrical behavior differ from the asymmetric 5SHY35L4512.
  • ABB 5SHX14H4510 — reverse-conducting IGCT designed for a different converter topology and application range.

 

Procurement Check

Before approving an ABB 5SHY35L4512, verify:

  • Exact part number: 5SHY35L4512
  • Device family: 4.5 kV asymmetric IGCT
  • Original power-stack schematic
  • Gate-unit generation and exact gate-driver assembly
  • Heatsink and pressure-clamping arrangement
  • Double-sided cooling arrangement
  • Busbar geometry and terminal orientation
  • Snubber/protection network
  • DC-link voltage
  • Required switching frequency
  • Parallel/series device configuration
  • Original semiconductor test records, if available
  • Junction-temperature and cooling requirements

Recommended procurement description:

ABB 5SHY35L4512 Asymmetric Integrated Gate-Commutated Thyristor (IGCT), 4.5 kV, 4000 A Controllable Turn-Off Current, Low On-State Voltage, Low-Frequency High-Power Switching Device.

The key point is that 5SHY35L4512 is a power semiconductor, not an automation control board. Its most important distinguishing characteristic within the ABB 5SHY35L45 family is the low on-state voltage / low-conduction-loss design. For a field replacement, matching the complete semiconductor stack and gate-unit configuration is more important than matching the part number alone.